منابع مشابه
Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis
ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. ...
متن کاملFractal terraces in MBE growth
MBE growth on high symmetry surfaces depends to some extent on the shape of the terraces which form the embryos of each new atomic layer. The conditions for formation of compact or fractal terraces are discussed in two limits: large terraces, to which a continuous description applies, and small terraces, which require that the discrete nature of matter be taken into account. In both cases it is...
متن کاملParallel Monte Carlo simulation of MBE growth
We present a parallel algorithm for Monte Carlo simulation of molecular beam epitazial growth (MBE) focusing on the software we have developed and the ezperiences gained. An eficient sequential method to do MBE simulation was developed that uses a single binary tree t o store the rates of occwence of all possible events at a given time. The challenge was to find a ioay to adapt this method to a...
متن کاملQuantum Interference Effects in Highly Doped n-ZnSe Epitaxy Layers Grown by MBE
Magnetotransport investigations of quantum interference effects at temperatures down to 0.35 K in a series of highly n-doped MBE-grown ZnSe epitaxy layers with electron densities from 8:2 10 to 7:5 10 cmÿ3 are presented. We observed a negative magnetoresistance in all samples studied. The change of magnetoconductivity Dsxx B shows a linear dependence on the square root of the magnetic field. T...
متن کاملStructure and growth mechanism of ZnSe nanowires
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ژورنال
عنوان ژورنال: IEEJ Transactions on Electronics, Information and Systems
سال: 1994
ISSN: 0385-4221,1348-8155
DOI: 10.1541/ieejeiss1987.114.12_1250